Mobility anisotropy in InSb/AlxIn1-xSb single quantum wells
Identifieur interne : 00E396 ( Main/Repository ); précédent : 00E395; suivant : 00E397Mobility anisotropy in InSb/AlxIn1-xSb single quantum wells
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Abstract
Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Mobility anisotropy in InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb single quantum wells</title><author><name sortKey="Ball, M A" uniqKey="Ball M">M. A. Ball</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Keay, J C" uniqKey="Keay J">J. C. Keay</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Chung, S J" uniqKey="Chung S">S. J. Chung</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Santos, M B" uniqKey="Santos M">M. B. Santos</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman</wicri:cityArea></affiliation></author><author><name sortKey="Johnson, M B" uniqKey="Johnson M">M. B. Johnson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oklahoma</region></placeName><wicri:cityArea>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0159249</idno><date when="2002-03-25">2002-03-25</date><idno type="stanalyst">PASCAL 02-0159249 AIP</idno><idno type="RBID">Pascal:02-0159249</idno><idno type="wicri:Area/Main/Corpus">00FA07</idno><idno type="wicri:Area/Main/Repository">00E396</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Atomic force microscopy</term><term>Electron mobility</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum wells</term><term>Surface scattering</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7363H</term><term>7325</term><term>7350D</term><term>Etude expérimentale</term><term>Indium composé</term><term>Aluminium composé</term><term>Semiconducteur III-V</term><term>Puits quantique semiconducteur</term><term>Mobilité électron</term><term>Microscopie force atomique</term><term>Diffusion surface</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. The electron mobility in the quantum well correlates to the density of abrupt features, such that samples with a high density of anisotropic defects show anisotropy in the mobility. We propose that the dominant scattering mechanism associated with these abrupt features is a fluctuation in the quantum well morphology. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>80</s2></fA05><fA06><s2>12</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Mobility anisotropy in InSb/Al<sub>x</sub>In<sub>1-x</sub>Sb single quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>BALL (M. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>KEAY (J. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHUNG (S. J.)</s1></fA11><fA11 i1="04" i2="1"><s1>SANTOS (M. B.)</s1></fA11><fA11 i1="05" i2="1"><s1>JOHNSON (M. B.)</s1></fA11><fA14 i1="01"><s1>Department of Physics and Astronomy and Center for Semiconductor Physics in Nanostructures, University of Oklahoma, Norman, Oklahoma 73019</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>2138-2140</s1></fA20><fA21><s1>2002-03-25</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0159249</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Three types of defects at the surface of InSb quantum well samples are identified: hillocks, square mounds, and oriented abrupt steps. 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